View BTS134D_98753.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HITFETO II.Generation BTS 134 D
Smart Lowside Power Switch
Features * Logic Level Input * Input Protection (ESD) * Thermal shutdown with auto restart * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Analog driving possible
P-TO252-3-11
Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 50 3.5 3 V mW A J
Application
* All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS O technology. Fully protected by embedded protection functions.
Vbb
M
HITFET a
Current Limitation
In Pin 1
Drain
OvervoltageProtection
Pin 2 and 4 (TAB)
Gate-Driving Unit Overtemperature Protection
ESD
Overload Protection
Short circuit Protection
Pin 3 Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
BTS 134 D Maximum Ratings at Tj = 25C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1) Continuous input current2) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 C 6cm 2 cooling area , TA = 85 C Unclamped single pulse inductive energy 2) Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 4.5 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 Thermal resistance junction - case: SMD: junction - ambient @ min. footprint @ 6 cm 2 cooling area 4)
1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) Page 2
Symbol VDS Vbb(SC) VIN IIN
Value 42 42 -0.2 2) ... +10
Unit V
mA self limited | IIN | 2
Tj Tstg Ptot
-40 ...+150 -55 ... +150
C W
43 1.1 EAS VLD 3 65 J V
2
kV
MSL1 40/150/56
RthJC RthJA
1.5 115 55
K/W
2004-03-05
BTS 134 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40...+85 C, V DS = 32 V , VIN = 0 V Tj = 150 C Input threshold voltage ID = 1.4 mA, T j = 25 C ID = 1.4 mA, T j = 150 C On state input current On-state resistance VIN = 5 V, ID = 3 A, Tj = 25 C VIN = 5 V, ID = 3 A, Tj = 150 C On-state resistance VIN = 10 V, I D = 3 A, Tj = 25 C VIN = 10 V, I D = 3 A, Tj = 150 C Nominal load current 5) Tj < 150C, V IN = 10 V, TA = 85 C, SMD 1) Nominal load current 5) VIN = 10 V, VDS = 0.5 V, TC = 85 C, Tj < 150C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, t m = 200 s ID(lim) 18 24 30 ID(ISO) 7.1 10 ID(Nom) RDS(on) 3.5 35 65 4.6 50 90 A IIN(on) RDS(on) 45 75 60 100 VIN(th) 1.3 0.8 1.7 10 2.2 30 A mW IDSS 1.5 5 8 15 V A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit
1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. 5not subject to production test, calculated by R thJA and Rds(on)
Page 3
2004-03-05
BTS 134 D Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 60 60 0.3 0.7 100 100 1.5 1.5 V/s s RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis 2) Input current protection mode Tj = 150 C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 C, Vbb = 12 V EAS 3 J Tjt DTjt IIN(Prot) 150 175 10 130 300 C K A Symbol min. Values typ. max. Unit
Inverse Diode
Inverse diode forward voltage IF = 15 A, tm = 250 s, V IN = 0 V, tP = 300 s VSD 1.0 1.5 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Page 4
2004-03-05
BTS 134 D
Block diagram
Terms Inductive and overvoltage output clamp
RL
V
I IN 1 IN HITFET S 3 D 2 ID VDS Vbb
Z
D
S HITFET
VIN
Input circuit (ESD protection)
Short circuit behaviour
Gate Drive Input
V IN
Source/ Ground
IIN
ID S
T j
Page 5
2004-03-05
BTS 134 D 1 Maximum allowable power dissipation Ptot = f(TC) resp. Ptot = f(TA) @ R thJA=55 K/W
3
2 On-state resistance RON=f(Tj); ID=3A; VIN=10V
100
mW
W Rthjc = 1.5 K/W
max.
80
RDS(on)
Ptot
2
SMD @ 6cm2
70 60 50 40
typ.
1.5
1
30 20 10
0.5
0 -50
-25
0
25
50
75
100
C
150
0 -50
-25
0
25
50
75
100 125 C
175
TA;TC
Tj
3 On-state resistance RON=f(Tj); I D=3A; VIN=5V
110
4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.7 mA; V DS = 12V
2
max. V
mW
90
1.6
RDS(on)
VGS(th)
80 70 60
typ.
1.4 1.2 1
50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 C 175 0.8 0.6 0.4 0.2 0 -50
C
-25
0
25
50
75
100
150
Tj
Page 6
Tj
2004-03-05
BTS 134 D 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25C
30
6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN
30
A
A
20
ID(SC)
20
Vin=10V
ID
15
15
5V
10
10
5
5
0 0
1
2
3
4
5
6
7
8
V
10
0 -50
-25
0
25
50
75
100 125 C
175
VIN
Tj
7 Typ. output characteristics I D=f(V DS); T Jstart=25C Parameter: VIN
35
A 10V 7V
8 Off-state drain current IDSS = f(Tj)
16
max. A
25
12
IDSS
6V
ID
10
20
4V
5V
8
15 6 10
typ. Vin=3V
4
5
2
0 0
1
2
3
4
V
6
0 -40
-15
10
35
60
85
110 135 C
185
VDS
Page 7
Tj
2004-03-05
BTS 134 D 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart
40
A -40C
10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T
10 2
K/W D=0.5
10 1
0.2 0.1 0.05
30
ID(lim)
25
25C
ZthJA
10 0
0.02 0.01
20
85C
15
150C
10 -1
10
10 -2
Single pulse
5
0 0
1
2
3
ms
5
10 -3 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10
s
10
3
t
tp
11 Determination of ID(lim) ID(lim) = f(t); t m = 200s Parameter: TJstart
40
A
30
-40C
ID(lim)
25
25C
20
85C
15
150C
10
5
0 0
0.1
0.2
0.3
0.4
ms
0.6
t
Page 8
2004-03-05
BTS 134 D
Package P-TO-252-3-11
6.5 +0.15 -0.05 5.4 0.1
1 0.1
Ordering Code Q67060-S6504-A5
A
B
0.9 +0.20 -0.01 0...0.15
0.51 min.
2.3 +0.05 -0.10 0.5 +0.08 -0.04
(5)
0.8 0.15
9.98 0.5 6.22 -0.2
0.15 max. per side
(4.24)
3x 0.75 0.1
0.5 +0.08 -0.04
0.1 B
2.28
4.57
0.25
M
AB
All metal surfaces tin plated, except area of cut.
Page 9
2004-03-05
BTS 134D
Revision History : Previous version : Page 2, 4 2, 3 2 2 2 3 2004-03-05 2003-04-22
Subjects (major changes since last revision) Footnote 2 extended to Vin<0V, Etot and TjT Footnote 5 implemented to Ptot, ID(nom) and ID(ISO) ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn. standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4 Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1 climatic category changed from DIN IEC 68-1 to DIN EN 60068-1 VIN(th) test conditions from ID=0.7mA to ID=1.4mA
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET(R), SIPMOS(R) are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 10
2004-03-05

▲Up To Search▲

Price & Availability of BTS134D

	To Download BTS134D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .